Comparison of linewidth enhancement factors in midinfrared active region materials
Identifieur interne : 012020 ( Main/Repository ); précédent : 012019; suivant : 012021Comparison of linewidth enhancement factors in midinfrared active region materials
Auteurs : RBID : Pascal:00-0180436Descripteurs français
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- 7866F, 7320D, 8530V, 4255P, 4260B, 7320A, 4255A, Etude théorique, Indium composé, Gallium composé, Semiconducteur III-V, Puits quantique semiconducteur, Laser puits quantique, Largeur raie, Bande conduction, Bande valence, Etat interface, Densité état électron, Laser réaction répartie, Théorie laser.
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Abstract
We report calculations of the linewidth enhancement factor for five midinfrared active region materials. The linewidth enhancement factors for two type-I quantum wells based on InAsSb are 2.5 and 5.4, which represent a reduction of up to a factor of 2.6 with respect to bulk InAs0.91Sb0.09. However, active region materials based on the type-II, InAs/GaInSb system have linewidth enhancement factors near 1.0, which is a factor of 2-5 reduction compared to the type-I quantum wells. The reduction of the linewidth enhancement factor is associated with both a reduction of the mismatch between the conduction and valence band densities of states and the presence of conduction band dispersion. We describe an additional optimization that is possible in the type-II materials: Carefully placed intersubband absorption features can be used to further reduce the linewidth enhancement factor. We show that linewidth enhancement values as low as 0.3 can be obtained in the type-II superlattices when fabricated into a distributed feedback structure. © 2000 American Institute of Physics.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Comparison of linewidth enhancement factors in midinfrared active region materials</title><author><name sortKey="Olesberg, J T" uniqKey="Olesberg J">J. T. Olesberg</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Physics and Astronomy and the Optical Science and Technology Center, The University of Iowa, Iowa City, Iowa 52242</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Iowa</region></placeName><wicri:cityArea>Department of Physics and Astronomy and the Optical Science and Technology Center, The University of Iowa, Iowa City</wicri:cityArea></affiliation></author><author><name sortKey="Flatte, Michael E" uniqKey="Flatte M">Michael E. Flatte</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Physics and Astronomy and the Optical Science and Technology Center, The University of Iowa, Iowa City, Iowa 52242</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Iowa</region></placeName><wicri:cityArea>Department of Physics and Astronomy and the Optical Science and Technology Center, The University of Iowa, Iowa City</wicri:cityArea></affiliation></author><author><name sortKey="Boggess, Thomas F" uniqKey="Boggess T">Thomas F. Boggess</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Physics and Astronomy and the Optical Science and Technology Center, The University of Iowa, Iowa City, Iowa 52242</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Iowa</region></placeName><wicri:cityArea>Department of Physics and Astronomy and the Optical Science and Technology Center, The University of Iowa, Iowa City</wicri:cityArea></affiliation></author></titleStmt><publicationStmt><idno type="inist">00-0180436</idno><date when="2000-05-15">2000-05-15</date><idno type="stanalyst">PASCAL 00-0180436 AIP</idno><idno type="RBID">Pascal:00-0180436</idno><idno type="wicri:Area/Main/Corpus">013624</idno><idno type="wicri:Area/Main/Repository">012020</idno></publicationStmt><seriesStmt><idno type="ISSN">0021-8979</idno><title level="j" type="abbreviated">J. appl. phys.</title><title level="j" type="main">Journal of applied physics</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Conduction bands</term><term>Distributed feedback lasers</term><term>Electronic density of states</term><term>Gallium compounds</term><term>III-V semiconductors</term><term>Indium compounds</term><term>Interface states</term><term>Laser theory</term><term>Line widths</term><term>Quantum well lasers</term><term>Semiconductor quantum wells</term><term>Theoretical study</term><term>Valence bands</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>7866F</term><term>7320D</term><term>8530V</term><term>4255P</term><term>4260B</term><term>7320A</term><term>4255A</term><term>Etude théorique</term><term>Indium composé</term><term>Gallium composé</term><term>Semiconducteur III-V</term><term>Puits quantique semiconducteur</term><term>Laser puits quantique</term><term>Largeur raie</term><term>Bande conduction</term><term>Bande valence</term><term>Etat interface</term><term>Densité état électron</term><term>Laser réaction répartie</term><term>Théorie laser</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">We report calculations of the linewidth enhancement factor for five midinfrared active region materials. The linewidth enhancement factors for two type-I quantum wells based on InAsSb are 2.5 and 5.4, which represent a reduction of up to a factor of 2.6 with respect to bulk InAs<sub>0.91</sub>Sb<sub>0.09</sub>. However, active region materials based on the type-II, InAs/GaInSb system have linewidth enhancement factors near 1.0, which is a factor of 2-5 reduction compared to the type-I quantum wells. The reduction of the linewidth enhancement factor is associated with both a reduction of the mismatch between the conduction and valence band densities of states and the presence of conduction band dispersion. We describe an additional optimization that is possible in the type-II materials: Carefully placed intersubband absorption features can be used to further reduce the linewidth enhancement factor. We show that linewidth enhancement values as low as 0.3 can be obtained in the type-II superlattices when fabricated into a distributed feedback structure. © 2000 American Institute of Physics.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0021-8979</s0></fA01><fA02 i1="01"><s0>JAPIAU</s0></fA02><fA03 i2="1"><s0>J. appl. phys.</s0></fA03><fA05><s2>87</s2></fA05><fA06><s2>10</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Comparison of linewidth enhancement factors in midinfrared active region materials</s1></fA08><fA11 i1="01" i2="1"><s1>OLESBERG (J. T.)</s1></fA11><fA11 i1="02" i2="1"><s1>FLATTE (Michael E.)</s1></fA11><fA11 i1="03" i2="1"><s1>BOGGESS (Thomas F.)</s1></fA11><fA14 i1="01"><s1>Department of Physics and Astronomy and the Optical Science and Technology Center, The University of Iowa, Iowa City, Iowa 52242</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></fA14><fA20><s1>7164-7168</s1></fA20><fA21><s1>2000-05-15</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>126</s2></fA43><fA44><s0>8100</s0><s1>© 2000 American Institute of Physics. All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>00-0180436</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Journal of applied physics</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>We report calculations of the linewidth enhancement factor for five midinfrared active region materials. The linewidth enhancement factors for two type-I quantum wells based on InAsSb are 2.5 and 5.4, which represent a reduction of up to a factor of 2.6 with respect to bulk InAs<sub>0.91</sub>Sb<sub>0.09</sub>. However, active region materials based on the type-II, InAs/GaInSb system have linewidth enhancement factors near 1.0, which is a factor of 2-5 reduction compared to the type-I quantum wells. The reduction of the linewidth enhancement factor is associated with both a reduction of the mismatch between the conduction and valence band densities of states and the presence of conduction band dispersion. We describe an additional optimization that is possible in the type-II materials: Carefully placed intersubband absorption features can be used to further reduce the linewidth enhancement factor. We show that linewidth enhancement values as low as 0.3 can be obtained in the type-II superlattices when fabricated into a distributed feedback structure. © 2000 American Institute of Physics.</s0></fC01><fC02 i1="01" i2="3"><s0>001B70H66F</s0></fC02><fC02 i1="02" i2="3"><s0>001B70C20D</s0></fC02><fC02 i1="03" i2="X"><s0>001D03F20</s0></fC02><fC02 i1="04" i2="3"><s0>001B40B55P</s0></fC02><fC02 i1="05" i2="3"><s0>001B40B60B</s0></fC02><fC02 i1="06" i2="3"><s0>001B70C20A</s0></fC02><fC02 i1="07" i2="3"><s0>001B40B55A</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>7866F</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="02" i2="3" l="FRE"><s0>7320D</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="03" i2="3" l="FRE"><s0>8530V</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="04" i2="3" l="FRE"><s0>4255P</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="05" i2="3" l="FRE"><s0>4260B</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="06" i2="3" l="FRE"><s0>7320A</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="07" i2="3" l="FRE"><s0>4255A</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Etude théorique</s0></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Theoretical study</s0></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Indium composé</s0></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Indium compounds</s0></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Gallium composé</s0></fC03><fC03 i1="10" i2="3" l="ENG"><s0>Gallium compounds</s0></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Semiconducteur III-V</s0></fC03><fC03 i1="11" i2="3" l="ENG"><s0>III-V semiconductors</s0></fC03><fC03 i1="12" i2="3" l="FRE"><s0>Puits quantique semiconducteur</s0></fC03><fC03 i1="12" i2="3" l="ENG"><s0>Semiconductor quantum wells</s0></fC03><fC03 i1="13" i2="3" l="FRE"><s0>Laser puits quantique</s0></fC03><fC03 i1="13" i2="3" l="ENG"><s0>Quantum well lasers</s0></fC03><fC03 i1="14" i2="3" l="FRE"><s0>Largeur raie</s0></fC03><fC03 i1="14" i2="3" l="ENG"><s0>Line widths</s0></fC03><fC03 i1="15" i2="3" l="FRE"><s0>Bande conduction</s0></fC03><fC03 i1="15" i2="3" l="ENG"><s0>Conduction bands</s0></fC03><fC03 i1="16" i2="3" l="FRE"><s0>Bande valence</s0></fC03><fC03 i1="16" i2="3" l="ENG"><s0>Valence bands</s0></fC03><fC03 i1="17" i2="3" l="FRE"><s0>Etat interface</s0></fC03><fC03 i1="17" i2="3" l="ENG"><s0>Interface states</s0></fC03><fC03 i1="18" i2="3" l="FRE"><s0>Densité état électron</s0></fC03><fC03 i1="18" i2="3" l="ENG"><s0>Electronic density of states</s0></fC03><fC03 i1="19" i2="3" l="FRE"><s0>Laser réaction répartie</s0></fC03><fC03 i1="19" i2="3" l="ENG"><s0>Distributed feedback lasers</s0></fC03><fC03 i1="20" i2="3" l="FRE"><s0>Théorie laser</s0></fC03><fC03 i1="20" i2="3" l="ENG"><s0>Laser theory</s0></fC03><fN21><s1>129</s1></fN21><fN47 i1="01" i2="1"><s0>0018M000222</s0></fN47></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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